NSN 5962-01-292-9196 (5962012929196) Microcircuit Memory Parts List

Alternative NSN: 5962-01-292-9196

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NCB Code: USA (01)

Manufacturers: Bae Systems Operations Limited Dba Bae Systems Plc , Dla Land And Maritime

ASAP Aerospace, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Customers can easily search our database to find NSN parts like Microcircuit Memory 9931-BCWX, ROM PROM FAMILY 081 of Bae Systems Operations Limited Dba Bae Systems Plc, Dla Land And Maritime with NSN 5962-01-292-9196.

NSN 5962-01-292-9196, National Stock Number, is a 13-digit serial number assigned by the US DLA to an item that is bought, stored, and sold via the federal supply chain. Unlike part numbers, NSNs are not arbitrary and follow a specific classification system.

Part Number List for NSN 5962012929196

Part No	Item Name	Manufacturer	QTY	RFQ
9931-BCWX	Microcircuit Memory	Bae Systems Operations Limited Dba Bae Systems Plc	Avl	RFQ
ROM PROM FAMILY 081	Microcircuit Memory	Dla Land And Maritime	Avl	RFQ

Characteristics Data of NSN 5962012929196

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 060 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING2 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN16 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT

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