NSN 5962-01-188-7173 (5962011887173) Microcircuit Memory Parts List

Alternative NSN: 5962-01-188-7173

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5962 Microcircuits Electronic

NCB Code: USA (01)

Manufacturers: Aai Corporation , Advanced Micro Devices Inc , Intel Corporation , Micro Power Systems Inc

ASAP Aerospace, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Customers can easily search our database to find NSN parts like Microcircuit Memory 58139-92019-45, AM8155DI, I8155, MD8155HB, MD8155HB of Aai Corporation, Micro Power Systems Inc, Intel Corporation, Advanced Micro Devices Inc with NSN 5962-01-188-7173.

NSN 5962-01-188-7173, National Stock Number, is a 13-digit serial number assigned by the US DLA to an item that is bought, stored, and sold via the federal supply chain. Unlike part numbers, NSNs are not arbitrary and follow a specific classification system.

Part Number List for NSN 5962011887173

Part No	Item Name	Manufacturer	QTY	RFQ
58139-92019-45	Microcircuit Memory	Aai Corporation	Avl	RFQ
AM8155DI	Microcircuit Memory	Micro Power Systems Inc	Avl	RFQ
I8155	Microcircuit Memory	Intel Corporation	Avl	RFQ
MD8155HB	Microcircuit Memory	Intel Corporation	Avl	RFQ
MD8155HB	Microcircuit Memory	Advanced Micro Devices Inc	Avl	RFQ
SM-A-959137	Microcircuit Memory	Advanced Micro Devices Inc	Avl	RFQ

Characteristics Data of NSN 5962011887173

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM
MEMORY	ADAT	BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM
MEMORY	ADAU	BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 5 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI
MEMORY	CBBL	FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN37 INPUT
MEMORY	CRHL	BIT QUANTITY2048
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT

Similar NSN of 5962011887173

5905-00-000-0136	5905-00-001-2573	5905-00-001-2813
5905-00-001-2852	5905-00-001-2882	5905-00-001-2890
5905-00-001-2934	5905-00-001-2951	5905-00-001-2952