NSN 5961-01-527-7593 (5961015277593) Transistor Parts List

Alternative NSN: 5961-01-527-7593

Item Name:Transistor

FSG: 59 Electrical and Electronic Equipment Components

Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware

NCB Code: USA (01)

Manufacturers: International Rectifier Corporation , Raytheon Company

ASAP Aerospace, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Customers can easily search our database to find NSN parts like Transistor 6499-344570-1, 93-0044, 93-0711, IRH7450SESCS, IRH7450SESCV of Raytheon Company, International Rectifier Corporation with NSN 5961-01-527-7593.

NSN 5961-01-527-7593, National Stock Number, is a 13-digit serial number assigned by the US DLA to an item that is bought, stored, and sold via the federal supply chain. Unlike part numbers, NSNs are not arbitrary and follow a specific classification system.

Part Number List for NSN 5961015277593

Part No	Item Name	Manufacturer	QTY	RFQ
6499-344570-1	Transistor	Raytheon Company	Avl	RFQ
93-0044	Transistor	International Rectifier Corporation	Avl	RFQ
93-0711	Transistor	International Rectifier Corporation	Avl	RFQ
IRH7450SESCS	Transistor	International Rectifier Corporation	Avl	RFQ
IRH7450SESCV	Transistor	International Rectifier Corporation	Avl	RFQ

Characteristics Data of NSN 5961015277593

MRC	Criteria	Characteristic
AGAV	III END ITEM IDENTIFICATION	NEXT ASSEMBLY 6130-01-446-2018MZ
TTQY	TERMINAL TYPE AND QUANTITY	2 PIN AND 2 UNTHREADED HOLE
AKPV	MOUNTING FACILITY QUANTITY	2
ABHP	OVERALL LENGTH	1.181 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
NHCF	NUCLEAR HARDNESS CRITICAL FEATURE	HARDENED
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	150.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
ABBH	INCLOSURE MATERIAL	METAL
CTQX	CURRENT RATING PER CHARACTERISTIC	10.00 AMPERES MAXIMUM DRAIN CURRENT
ALAZ	JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-204AA(MODIFIED TO-3)
CTRD	POWER RATING PER CHARACTERISTIC	150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
CTMZ	SEMICONDUCTOR MATERIAL	SILICON
AXGY	MOUNTING METHOD	TERMINAL AND UNTHREADED HOLE
CXCY	III PART NAME ASSIGNED BY CONTROLLING AGENCY	TRANSISTOR,N-CHANNEL HEX-FET POWER

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