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NSN 5962-01-083-5164 (5962010835164) Microcircuit Memory Parts List

Alternative NSN: 5962-01-083-5164
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 010835164
NCB Code: USA (01)
Manufacturers: Mcdonnell Douglas Aerospace , Philips Semiconductors Inc , Raytheon Company

ASAP Aerospace, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Customers can easily search our database to find NSN parts like Microcircuit Memory 807802-055A41, 807802-055A41, N82S137F of Mcdonnell Douglas Aerospace, Raytheon Company, Philips Semiconductors Inc with NSN 5962-01-083-5164.

NSN 5962-01-083-5164, National Stock Number, is a 13-digit serial number assigned by the US DLA to an item that is bought, stored, and sold via the federal supply chain. Unlike part numbers, NSNs are not arbitrary and follow a specific classification system.


Part Number List for NSN 5962010835164

  • Part No Item Name Manufacturer QTY RFQ
    807802-055A41 Microcircuit Memory Mcdonnell Douglas Aerospace Avl RFQ
    807802-055A41 Microcircuit Memory Raytheon Company Avl RFQ
    N82S137F Microcircuit Memory Philips Semiconductors Inc Avl RFQ

Characteristics Data of NSN 5962010835164

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
ADATBODY WIDTH0.302 INCHES MAXIMUM
ADAUBODY HEIGHT0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE+0.0/+75.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
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