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NSN 5962-01-110-6892 (5962011106892) Microcircuit Memory Parts List

Alternative NSN: 5962-01-110-6892
Item Name:Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 011106892
NCB Code: USA (01)
Manufacturers: National Semiconductor Corp , Raytheon Company

ASAP Aerospace, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Customers can easily search our database to find NSN parts like Microcircuit Memory MM54C200D, MM54C200D 883B, SM-C-875377 of National Semiconductor Corp, Raytheon Company with NSN 5962-01-110-6892.

NSN 5962-01-110-6892, National Stock Number, is a 13-digit serial number assigned by the US DLA to an item that is bought, stored, and sold via the federal supply chain. Unlike part numbers, NSNs are not arbitrary and follow a specific classification system.


Part Number List for NSN 5962011106892

  • Part No Item Name Manufacturer QTY RFQ
    MM54C200D Microcircuit Memory National Semiconductor Corp Avl RFQ
    MM54C200D 883B Microcircuit Memory National Semiconductor Corp Avl RFQ
    SM-C-875377 Microcircuit Memory Raytheon Company Avl RFQ

Characteristics Data of NSN 5962011106892

MRCCriteriaCharacteristic
ABKWOVERALL HEIGHT0.365 INCHES MAXIMUM
ADAQBODY LENGTH0.810 INCHES MAXIMUM
ADATBODY WIDTH0.270 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
ADAUBODY HEIGHT0.105 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING500.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND 3-STATE OUTPUT AND LOW POWER AND W/ENABLE AND MONOLITHIC
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN13 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC18.3 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPERAM
CZZZMEMORY CAPACITYUNKNOWN
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
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