MRC | Criteria | Characteristic |
---|
MEMORY | ADAQ | BODY LENGTH1 490 INCHES MAXIMUM |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
MEMORY | ABKW | OVERALL HEIGHT0 432 INCHES MAXIMUM |
MEMORY | CBBL | FEATURES PROVIDEDWDISABLE AND WINHIBIT AND WENABLE AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM POWER SOURCE AND 6 25 VOLTS MAXIMUM POWER SOURCE |
MEMORY | ABHP | OVERALL LENGTH1 490 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC125 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTICERR-060 MAXIMUM AND ERR-060 MAXIMUM |
MEMORY | CZER | MEMORY DEVICE TYPEEEPROM |
MEMORY | ADAU | BODY HEIGHT0 172 INCHES MINIMUM AND 0 217 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
MEMORY | CRHL | BIT QUANTITY262144 |
MEMORY | CSWJ | WORD QUANTITY32768 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |