WS57C29C-35ZMB Part with NSN 5962013478622 by E2v Inc - Buy Now

Part Number:  WS57C29C-35ZMB
Alternate P/N:  WS57C29C35ZMB
Manufacturer:  E2v Inc
Item Name :  microcircuit memory
CAGE Code:  0C7V7
NIIN:  01-347-8622
INC Code:  41015
Country:  USA
NCB Code:  01

Thank you for taking an interest in E2v Inc part number WS57C29C-35ZMB, which is currently available for purchase today here on ASAP Aerospace. You have reached our Request for Quote (RFQ) page for this part number WS57C29C-35ZMB, where we make it easy to secure competitive pricing and procurement options from our staff.

Part Number WS57C29C-35ZMB Details: 

Part number WS57C29C-35ZMB traces back to E2v Inc (CAGE Code 0C7V7), having been classified under NSN 5962013478622 and item name Microcircuit Memory. With its NSN, this part number belongs to FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic. Additional listing data derived from the NSN includes the NIIN 013478622, the INC 41015, and NCB code 01 (USA).

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number WS57C29C-35ZMB with NSN 5962-01-347-8622, 5962013478622

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-347-8622

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620134786220NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
WS57C29C-35ZMB515

Characteristics Data of NSN 5962-01-347-8622, 5962013478622

MRCCriteriaCharacteristic
CQSJINCLOSURE MATERIALCERAMIC
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CTFTCASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510
CZERMEMORY DEVICE TYPEPROM
TTQYTERMINAL TYPE AND QUANTITY28 LEADLESS
ADAQBODY LENGTH0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
ADATBODY WIDTH0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
CQZPINPUT CIRCUIT PATTERN11 INPUT
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYONE TIME PROGRAMMABLE PROM
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC35.00 NANOSECONDS NOMINAL ACCESS
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.).
ADAUBODY HEIGHT0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING550.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDPROGRAMMABLE AND MONOLITHIC AND W/DISABLE
CQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
CWSGTERMINAL SURFACE TREATMENTSOLDER

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