FM3955 Part with NSN 5961011836231 by Micro Power Systems Inc - Buy Now

Part Number:  FM3955
Manufacturer:  Micro Power Systems Inc
Item Name :  transistor
CAGE Code:  54186
NIIN:  01-183-6231
INC Code:  20588
Country:  USA
NCB Code:  01

Thank you for taking an interest in Micro Power Systems Inc part number FM3955, which is currently available for purchase today here on ASAP Aerospace. You have reached our Request for Quote (RFQ) page for this part number FM3955, where we make it easy to secure competitive pricing and procurement options from our staff.

Part Number FM3955 Details: 

Part number FM3955 traces back to Micro Power Systems Inc (CAGE Code 54186), having been classified under NSN 5961011836231 and item name Transistor. With its NSN, this part number belongs to FSG 59 Electrical and Electronic Equipment Components and FSC 5961 Semiconductor Devices and Associated Hardware. Additional listing data derived from the NSN includes the NIIN 011836231, the INC 20588, and NCB code 01 (USA).

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number FM3955 with NSN 5961-01-183-6231, 5961011836231

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-183-6231

Item PartTypeName:

TRANSISTOR

59610118362310NB
CIICHCCESDPMICCriticalityENAC
UBA
Part NumberISCRNVCRNCCHCCMSDSSADC
MP3955C23

Characteristics Data of NSN 5961-01-183-6231, 5961011836231

MRCCriteriaCharacteristic
ALASINTERNAL CONFIGURATIONFIELD EFFECT
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC0.50 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
CTRDPOWER RATING PER CHARACTERISTIC400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION

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