101-3002-000 Part with NSN 5962012308401 by Micro Science Inc - Buy Now

Part Number: 101-3002-000

Alternate P/N: 1013002000

Manufacturer: Micro Science Inc

NSN: 5962-01-230-8401

Item Name : microcircuit memory

CAGE Code: 64842

NIIN: 01-230-8401

FSC: 5962 Microcircuits Electronic

FSG: 59 Electrical and Electronic Equipment Components

INC Code: 41015

Country: USA

NCB Code: 01

Thank you for taking an interest in Micro Science Inc part number 101-3002-000, which is currently available for purchase today here on ASAP Aerospace. You have reached our Request for Quote (RFQ) page for this part number 101-3002-000, where we make it easy to secure competitive pricing and procurement options from our staff.

Part Number 101-3002-000 Details:

Part number 101-3002-000 traces back to Micro Science Inc (CAGE Code 64842), having been classified under NSN 5962012308401 and item name Microcircuit Memory. With its NSN, this part number belongs to FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic. Additional listing data derived from the NSN includes the NIIN 012308401, the INC 41015, and NCB code 01 (USA).

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Characteristics Data of NSN 5962-01-230-8401, 5962012308401

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 210 INCHES NOMINAL
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION6625-01-211-9471 TESTERDIGITAL
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND ULTRAVIOLET ERASABLE AND WENABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN14 INPUT
MEMORY	CRHL	BIT QUANTITY32768
MEMORY	CSWJ	WORD QUANTITY4096
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 6 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT