Thank you for taking an interest in Texas Instruments Inc part number 8102403VA, which is currently available for purchase today here on ASAP Aerospace. You have reached our Request for Quote (RFQ) page for this part number 8102403VA, where we make it easy to secure competitive pricing and procurement options from our staff.
Part Number 8102403VA Details:
Part number 8102403VA traces back to Texas Instruments Inc (CAGE Code 8E775), having been classified under NSN 5962016414210 and item name Microcircuit Memory. With its NSN, this part number belongs to FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic. Additional listing data derived from the NSN includes the NIIN 016414210, the INC 41015, and NCB code 01 (USA).
Note : We Will Not Share Your Information To Any Third Parties.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-641-4210 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 016414210 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 8102403VA | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CSWJ | WORD QUANTITY | 4096" |
| CWSG | TERMINAL SURFACE TREATMENT | TIN" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 4K" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND ELECTROSTATIC SENSITIVE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CSWJ | WORD QUANTITY | 4096" |
| CWSG | TERMINAL SURFACE TREATMENT | TIN" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MEMORY IC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 220.0 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 4K" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PIN" |
Million
Parts Sold
Million
Parts Available
Thousand
Happy Customers
